High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...

There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...

The need to improve electronic circuits’ efficiency, to follow the ongoing trend to lower supply voltages and higher operating currents and to deal with multiple supply voltages has lead to certain ...

For nearly two decades, two‑dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy‑efficient ...

NXP Semiconductors N.V. announced the industry’s first medium power transistors in a 2-mm x 2-mm 3-pin leadless DFN package. Offering a unique solution in an ultra-small DFN2020-3 (SOT1061) ...

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...

BENGALURU: Researchers from the Indian Institute of Science (IISc) have reported a breakthrough in the design of gallium nitride (GaN) power transistors, a development that could help accelerate the ...

PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the introduction of the DXTN/P 78Q & 80Q series.

Mayank Shrivastava (third from right) holding a representative power device 8” wafer, with some of his PhD students who work on various aspects of GaN Power and RF technology (Photo credit: IISc) ...